DocumentCode
2145012
Title
Wire bond, flip-chip, and chip-scale-package solution to high silicon integration
Author
Bantog, Ely ; Chiu, Steve ; Chen, C.T. ; Pu, H.P. ; Hsiao, C.S.
Author_Institution
Siliconware Precision Ind. Co. Ltd., Taichung
fYear
0
fDate
0-0 0
Abstract
In order to meet the increasing demands for smaller, higher functionality-integrated low cost package, original device manufacturers (ODM´s) and their suppliers develop new semiconductor devices and packaging technologies through silicon (Si) integration. The high levels of Silicon (Si) integration for baseband functions have lesser development time due to the system level integration of ASICs (application specific ICs) and the common CMOS processing for baseband functions. The memory and RF functionality is now being accomplished through specific packaging advancement or in system in a chip (SiP) package (Kada and Smith, 2000). This paper closely discussed advancement and solution technology that can further integrate diverse device technologies - the development of the wire bond + flip chip-chip scale package, a package that can combine flash, SRAM and DRAM memory as well as baseband, mixed signal and logic functions. This paper discussed the optional similar future packages for high-density trace routing and thermal improvement demand
Keywords
CMOS integrated circuits; flip-chip devices; lead bonding; mixed analogue-digital integrated circuits; system-in-package; thermal management (packaging); ASIC; CMOS; ODM; RF functions; SiP; application specific IC; baseband functions; chip-scale-package solution; flip-chip; high silicon integration; memory functions; original device manufacturers; packaging technology; semiconductor devices; system-in-chip; wire bond; Baseband; Bonding; CMOS technology; Chip scale packaging; Cost function; Semiconductor device manufacture; Semiconductor device packaging; Semiconductor devices; Silicon; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 2006. Proceedings. 56th
Conference_Location
San Diego, CA
ISSN
0569-5503
Print_ISBN
1-4244-0152-6
Type
conf
DOI
10.1109/ECTC.2006.1645838
Filename
1645838
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