Title :
Enhanced ferroelectric properties of BiFeO3/Bi3.15Nd0.85Ti3O12 multilayer capacitors at room temperature applied in dielectric devices
Author :
Xie, Dan ; Zang, Yongyuan ; Luo, Yafeng ; Ren, Tianling ; Liu, Litian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
Anti-ferromagnetic BiFeO3/Bi3.15Nd0.85Ti3O12 (BFO/BNdT) multilayer films with remnant polarization of 22.1 ¿C/cm2 have been fabricated by sol-gel method on Pt (100)/Ti/SiO2/Si (100) substrate. X-ray diffraction analysis indicates high (110) orientation and a relatively degree of (111) orientation in the multilayer achieved. The dielectric constant and the dissipation factor of the multilayer are 373 and 0.05 measured at 105 Hz, respectively. The multilayer film exhibits little polarization fatigue(<5%) upon 1010 switching cycles. The enhanced ferroelectric properties are mostly ascribed to the coupling reaction between the BFO and BNdT thin films, and the BNdT layer induces the crystallization of BFO thin film.
Keywords :
X-ray diffraction; antiferromagnetic materials; bismuth compounds; crystallisation; dielectric hysteresis; dielectric polarisation; ferroelectric capacitors; ferroelectric switching; ferroelectric thin films; magnetic thin films; multiferroics; multilayers; neodymium compounds; permittivity; sol-gel processing; thin film capacitors; (110) orientation; (111) orientation; BiFeO3-Bi3.15Nd0.85Ti3O12; Pt-Ti-SiO2-Si; X-ray diffraction analysis; antiferromagnetic multilayer films; dielectric constant; dissipation factor; ferroelectric switching; frequency 100000 Hz; multilayer capacitors; polarization fatigue; remnant polarization; sol-gel method; temperature 293 K to 298 K; thin film crystallization; Antiferromagnetic materials; Bismuth; Dielectric substrates; Ferroelectric films; Ferroelectric materials; Neodymium; Nonhomogeneous media; Polarization; Semiconductor films; Transistors;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734628
