Growth and characterization of Si/SiN/SiC structures by APCVD process

Polycrystal 3C-SiC films have been grown on Si/SiN structures via atmospheric pressure chemical vapor deposition (APCVD) process with a SiH₄-C₃H₈-H₂ reaction gas system. The change of SiN microstructure during high temperature pretreatment, and its effect on the crystallinities of SiC growth films were measured using SEM and XRD. Experiment results show that high temperature pretreatment of substrates¿ surface lead to a change of SiN from poly-crystal to quasi-crystal. The crystallized surface of SiN prevent the forming of Si-C bonding and growth of SiC films. This change can be controlled with a lower growth temperature and then a poly SiC films preferential orientation grown along <111> direction is obtained contained some poly-silicon grains.