• DocumentCode
    2145836
  • Title

    Physical and optical properties of ZnO thin films grown by DC sputtering deposition

  • Author

    Chen, Tao ; Liu, Shu-Yi ; Detavernier, Christophe ; Van Meirhaeghe, R.L. ; Qu, Xin-Ping

  • Author_Institution
    Dept. of Microelectron., Fudan Univ., Shanghai, China
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    742
  • Lastpage
    745
  • Abstract
    The effects of the deposition condition of DC sputtering on the properties of ZnO thin films were systematic investigated. ZnO films have been prepared by DC sputtering on the Si and glass substrates in the Ar and O2/Ar ambient with different substrate temperature ranging from room temperature to 300°C. Optimal results of the ZnO film were obtained with a deposition temperature of 300°C in the O2/Ar ambient. The film has a preferential orientation of (002) and the Zn to O ratio is stoichiometric with a strong band-edge emission in the ultraviolet region. All the films deposited on glass have an optical transmittance over 80 % in the wavelength ranging from 400 nm to 800 nm.
  • Keywords
    II-VI semiconductors; optical properties; sputter deposition; stoichiometry; zinc compounds; DC sputtering deposition; ZnO; band edge emission; glass substrate; silicon substrate; temperature 293 K to 300 C; thin films; wavelength 400 nm to 800 nm; Argon; Glass; Optical films; Pulsed laser deposition; Semiconductor films; Sputtering; Substrates; Temperature distribution; X-ray scattering; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734639
  • Filename
    4734639