DocumentCode
2145836
Title
Physical and optical properties of ZnO thin films grown by DC sputtering deposition
Author
Chen, Tao ; Liu, Shu-Yi ; Detavernier, Christophe ; Van Meirhaeghe, R.L. ; Qu, Xin-Ping
Author_Institution
Dept. of Microelectron., Fudan Univ., Shanghai, China
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
742
Lastpage
745
Abstract
The effects of the deposition condition of DC sputtering on the properties of ZnO thin films were systematic investigated. ZnO films have been prepared by DC sputtering on the Si and glass substrates in the Ar and O2/Ar ambient with different substrate temperature ranging from room temperature to 300°C. Optimal results of the ZnO film were obtained with a deposition temperature of 300°C in the O2/Ar ambient. The film has a preferential orientation of (002) and the Zn to O ratio is stoichiometric with a strong band-edge emission in the ultraviolet region. All the films deposited on glass have an optical transmittance over 80 % in the wavelength ranging from 400 nm to 800 nm.
Keywords
II-VI semiconductors; optical properties; sputter deposition; stoichiometry; zinc compounds; DC sputtering deposition; ZnO; band edge emission; glass substrate; silicon substrate; temperature 293 K to 300 C; thin films; wavelength 400 nm to 800 nm; Argon; Glass; Optical films; Pulsed laser deposition; Semiconductor films; Sputtering; Substrates; Temperature distribution; X-ray scattering; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734639
Filename
4734639
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