• DocumentCode
    2145850
  • Title

    Physics of Future Ultra High Speed Transistors - Part 1: HBT

  • Author

    Kasper, Erich ; Eberhardt, Jochen

  • Author_Institution
    Institut fÿr Halbleitertechnik, Universitÿt Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
  • Volume
    1
  • fYear
    1999
  • fDate
    Oct. 1999
  • Firstpage
    151
  • Lastpage
    154
  • Abstract
    An overview about current status of SiGe-HBT production is given. Advanced SiGe-HBTs are predicted to reach in near future fT=200 GHz. Design examples are given.
  • Keywords
    Bipolar transistors; Crystalline materials; Doping; Frequency; Heterojunction bipolar transistors; Photonic band gap; Physics; Production; Silicon; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1999. 29th European
  • Conference_Location
    Munich, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1999.338295
  • Filename
    4139390
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2145850