Characterization of low-dielectric-constant SiCON films grown by PECVD under different RF power

Author

Zhang, Lei ; Guo, Hao-Wen ; Zhang, Chi ; Zhang, Wei ; Ding, Shi-Jin

Author_Institution

Sch. of Microelectron., Fudan Univ., Shanghai, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

788

Lastpage

791

Abstract

In this paper, we report the influence of RF power on carbon- and nitride-doped silicon oxide (SiCON) films deposited by PECVD using SiH₄, N₂O and C₂F₆ precursors. The deposited films are characterized by means of FTIR and XPS, revealing the coexistence of both ring and network frameworks as well as Si-C, Si-N, C-N, C-H and Si-O bonds. The dielectric constant (k) and deposition rate of the SiCON film decrease with increasing the RF power. In the present experiment, a k value of 2.35 is achieved while retaining a low leakage current of 2.7Ã—10^-7A/cm² at 7.8MV/cm.

Keywords

Fourier transform spectra; X-ray photoelectron spectra; high-k dielectric thin films; infrared spectra; leakage currents; plasma CVD; silicon compounds; FTIR; PECVD; SiCON; XPS; bonds; carbon-doped silicon oxide film; deposition rate; film growth; leakage current; low-dielectric-constant films; nitride-doped silicon oxide film; voltage 7.8 MV; Dielectric constant; Dielectric materials; Dielectric measurements; Electrodes; Polymer films; Radio frequency; Semiconductor films; Silicon; Substrates; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734662

Filename

4734662