DocumentCode
2146408
Title
Technologies and materials for memory with full compatibility to CMOS
Author
Min-hwa Chi ; Hanming Wu
Author_Institution
Semicond. Manuf. Int. (Shanghai) Corp., Pudong, China
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
823
Lastpage
826
Abstract
As CMOS scaling continuous successfully, technologies for integrating both memory and logic together is highly desirable for high performance and low-power system-on-chip (SOC) with full CMOS compatibility, such as Logic based NVM, floating-body DRAM, MiM based eDRAM, PC-RAM, RRAM, MRAM, FeRAM, ...etc.. New materials (e.g. GST, metal-oxide, high-k, magnetic junction, ...etc.) have greater compatibility in BEOL. Thus, fully CMOS compatible SOC is a promising trend into the future.
Keywords
CMOS memory circuits; DRAM chips; system-on-chip; CMOS memory circuits; FeRAM; MRAM; NVM; PC-RAM; RRAM; eDRAM; floating-body DRAM; nonvolatile memories; system-on-chip; CMOS logic circuits; CMOS technology; Channel hot electron injection; High K dielectric materials; High-K gate dielectrics; MIM capacitors; Nonvolatile memory; Random access memory; SONOS devices; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734669
Filename
4734669
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