• DocumentCode
    2146579
  • Title

    A symmetric non-quasi-static large-signal FET model with a truly consistent analytic determination from DC-and S-parameter data

  • Author

    Schmale, Ingo ; Kompa, Günter

  • Author_Institution
    University of Kassel, Fachgebiet Hochfrequenztechnik, Wilhelmshöher Allee 73, D-34121 Kassel, Germany, Tel: +49-561-804-6535, Fax: -6529, E-mail: schmale@ieee.org
  • Volume
    1
  • fYear
    1999
  • fDate
    Oct. 1999
  • Firstpage
    258
  • Lastpage
    261
  • Abstract
    A symmetric non-quasi-static large-signal model compatible to small-signal modelling is presented for GaAs-MESFETs and HEMTs. Analytic formulae for a direct extraction from de-embedded admittance-parameters are presented. As the large-signal model is consistently determined from DC-and S-parameter data, it enables both highly reliable non-linear simulations as well as it offers excellent accuracy in small-signal simulations. Ample experimental validation is finally provided.
  • Keywords
    Circuit simulation; Delay effects; Diodes; Electronic mail; Equivalent circuits; FETs; Frequency; HEMTs; MODFETs; Scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1999. 29th European
  • Conference_Location
    Munich, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1999.338322
  • Filename
    4139417
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2146579