Title :
Mixed mode bending test for interfacial adhesion in semiconductor applications
Author :
Thijsse, J. ; van Driel, W.D. ; van Gils, M.A.J. ; van der Sluis, O.
Author_Institution :
Philips Appl. Technol., Eindhoven
Abstract :
Currently, prediction of interface strength is typically done using the critical energy release rate. Interface strength, however, is heavily dependent on mode mixity. Accurately predicting delamination therefore requires a material model that includes the mode dependency of interface strength. A novel test setup is designed which allows mixed mode delamination testing. The setup is a stabilized version of the mixed mode bending test previously described by Reeder and Crews (1990; 1991). It allows for the measurement of stable crack growth over the full range of mode mixities, using a single specimen design. The crack length, necessary for calculation of the energy release rate, is obtained from an analytical model. Crack length and displacement data are used in a finite element model containing a crack tip to calculate the mode mixity
Keywords :
adhesion; bending; cracks; delamination; interface phenomena; mechanical testing; crack length; delamination testing; finite element model; interface strength; interfacial adhesion; mixed mode bending test; mode dependency; semiconductor packages; stable crack growth measurement; Adhesives; Analytical models; Delamination; Equations; Finite element methods; Gas insulated transmission lines; Kinetic energy; Moisture; Predictive models; Semiconductor device testing;
Conference_Titel :
Electronic Components and Technology Conference, 2006. Proceedings. 56th
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-0152-6
DOI :
10.1109/ECTC.2006.1645917