SG-TFS: A versatile embedded flash with silicon nanocrystals as the storage medium

Author

Chang, Ko-Min

Author_Institution

Silicon Technol. Solutions, Freescale Semicond., Inc., Austin, TX, USA

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

943

Lastpage

946

Abstract

Since Tiwari introduced the nanocrystal memory concept in 1996, much progress has been made in the areas of nanocrystal deposition, storage stack engineering, process integration, cell design, and array architecture. This paper describes the highly versatile flash technology, SG-TFS, in terms of its applicability from low-end to high-end, from code storage to data storage, and from consumer to automotive market segments. SG-TFS stands for split-gate thin film storage and is built with silicon nanocrystals as its storage medium. Superior performance and reliability are demonstrated with a 90 nm 16 Mbit memory array.

Keywords

flash memories; nanoelectronics; nanostructured materials; thin film circuits; array architecture; cell design; nanocrystal deposition; nanocrystal memory; process integration; silicon nanocrystals; size 90 nm; split-gate thin film storage; storage stack engineering; versatile embedded flash; Automotive engineering; Design engineering; Flash memory; Nanocrystals; Nonvolatile memory; Process design; Quantum dots; Semiconductor thin films; Silicon; Split gate flash memory cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734698

Filename

4734698