• DocumentCode
    2147255
  • Title

    Ultrahigh-aspect-ratio Si and SiO2 deeply-etched periodic structures with extremely smooth surfaces for photonics applications

  • Author

    Hosomi, K. ; Yamada, H. ; Kikawa, T. ; Goto, S. ; Katsuyama, T. ; Arakawa, Y.

  • Author_Institution
    Inst. of Industrial Sci., Tokyo Univ., Japan
  • fYear
    2005
  • fDate
    21-23 Sept. 2005
  • Firstpage
    140
  • Lastpage
    142
  • Abstract
    One-dimensional deeply-etched periodic Si and SiO2 structures were fabricated and had excellent vertical profiles (< 0.5 deg.), ultrahigh aspect ratios (∼ 80) and large etch depths (∼ 20 μm). Low scattering optical loss can be expected by their extremely smooth surfaces.
  • Keywords
    elemental semiconductors; etching; optical fabrication; optical losses; optical materials; periodic structures; silicon; silicon compounds; Si; Si periodic structure; SiO2; SiO2 periodic structure; aspect ratio; deep etching; scattering optical loss; smooth surfaces; Etching; Light scattering; Optical device fabrication; Optical devices; Optical scattering; Optical surface waves; Oxidation; Periodic structures; Photonics; Textile industry;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2005. 2nd IEEE International Conference on
  • Print_ISBN
    0-7803-9070-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2005.1516431
  • Filename
    1516431
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2147255