• DocumentCode
    2147298
  • Title

    Silicon resonant cavity enhanced Schottky photodetector at 1.55 μm

  • Author

    Casalino, M. ; Sirleto, L. ; Moretti, L. ; Libert, S. ; Rendina, I.

  • Author_Institution
    Istituto per la Microelettronica e Microsistemi, Consiglio Nazionale delle Ricerche, Napoli, Italy
  • fYear
    2005
  • fDate
    21-23 Sept. 2005
  • Firstpage
    143
  • Lastpage
    145
  • Abstract
    In this paper we propose the design of a silicon resonant cavity enhanced Schottky photodetector based on the internal photoemission effect, working at 1.55 μm, and entirely compatible with ULSI silicon technology.
  • Keywords
    Schottky barriers; Schottky diodes; ULSI; elemental semiconductors; optical design techniques; photodetectors; photodiodes; photoemission; silicon; 1.55 mum; Schottky photodetector; Si; ULSI; internal photoemission effect; silicon resonant cavity design; Costs; Electrons; Optical films; Optical scattering; Photodetectors; Photoelectricity; Resonance; Schottky barriers; Silicon; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2005. 2nd IEEE International Conference on
  • Print_ISBN
    0-7803-9070-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2005.1516432
  • Filename
    1516432
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2147298