DocumentCode
2147359
Title
High static performance polarization insensitive strained InGaAsP/InGaAsP MQW electroabsorption modulator grown by atmospheric pressure MOVPE
Author
Ougazzaden, A. ; Mircea, A. ; Chelles, S. ; Devaux, F. ; Huet, F. ; Le-Roux, G.
Author_Institution
France Telecom, CNET, Bagneux, France
fYear
1994
fDate
27-31 Mar 1994
Firstpage
80
Lastpage
82
Abstract
Electroabsorption (EA) modulators based on the quantum confined Stark effect (QCSE) reach a high level of performance using InGaAsP/lnGaAsP multi-quantum well (MQW) structures. However applications for optical fiber communications, such as in-line optical pulse reshaping and optical demultiplexing, require polarization independent operation. This means identical on-state attenuation and electroabsorption spectra for both TE and TM modes. That is, the same electron to heavy hole, and electron to light hole transition energies as well as their shift with the applied electric field; and the same oscillator strength for TE and TM modes. The growth was performed by atmospheric pressure MOVPE in a T-shaped reactor
Keywords
III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; light polarisation; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InGaAsP-InGaAsP; InGaAsP/InGaAsP; T-shaped reactor; TE modes; TM modes; applied electric field; atmospheric pressure MOVPE; electroabsorption spectra; heavy hole; high static performance; identical on-state attenuation; in-line optical pulse reshaping; light hole; multi-quantum well structures; optical demultiplexing; optical fiber communications; oscillator strength; polarization independent operation; polarization insensitive; quantum confined Stark effect; strained MQW electroabsorption modulator; transition energies; Charge carrier processes; Electron optics; Optical attenuators; Optical fiber communication; Optical fiber polarization; Optical pulses; Potential well; Quantum well devices; Stark effect; Tellurium;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location
Santa Barbara, CA
Print_ISBN
0-7803-1476-X
Type
conf
DOI
10.1109/ICIPRM.1994.328165
Filename
328165
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