• DocumentCode
    2147359
  • Title

    High static performance polarization insensitive strained InGaAsP/InGaAsP MQW electroabsorption modulator grown by atmospheric pressure MOVPE

  • Author

    Ougazzaden, A. ; Mircea, A. ; Chelles, S. ; Devaux, F. ; Huet, F. ; Le-Roux, G.

  • Author_Institution
    France Telecom, CNET, Bagneux, France
  • fYear
    1994
  • fDate
    27-31 Mar 1994
  • Firstpage
    80
  • Lastpage
    82
  • Abstract
    Electroabsorption (EA) modulators based on the quantum confined Stark effect (QCSE) reach a high level of performance using InGaAsP/lnGaAsP multi-quantum well (MQW) structures. However applications for optical fiber communications, such as in-line optical pulse reshaping and optical demultiplexing, require polarization independent operation. This means identical on-state attenuation and electroabsorption spectra for both TE and TM modes. That is, the same electron to heavy hole, and electron to light hole transition energies as well as their shift with the applied electric field; and the same oscillator strength for TE and TM modes. The growth was performed by atmospheric pressure MOVPE in a T-shaped reactor
  • Keywords
    III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; light polarisation; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InGaAsP-InGaAsP; InGaAsP/InGaAsP; T-shaped reactor; TE modes; TM modes; applied electric field; atmospheric pressure MOVPE; electroabsorption spectra; heavy hole; high static performance; identical on-state attenuation; in-line optical pulse reshaping; light hole; multi-quantum well structures; optical demultiplexing; optical fiber communications; oscillator strength; polarization independent operation; polarization insensitive; quantum confined Stark effect; strained MQW electroabsorption modulator; transition energies; Charge carrier processes; Electron optics; Optical attenuators; Optical fiber communication; Optical fiber polarization; Optical pulses; Potential well; Quantum well devices; Stark effect; Tellurium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-1476-X
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1994.328165
  • Filename
    328165