• DocumentCode
    2147363
  • Title

    State-Of-The-Art Performance of a Heterostructure Barrier Varactor Tripler Operating at 250 GHz

  • Author

    Mélique, X. ; Maestrini, A. ; Goutoule, J.M. ; Goy, P. ; Mounaix, P. ; Trier, M. ; Vanbésien, O. ; Beaudin, G. ; Lippens, D.

  • Author_Institution
    Institut d´´Electronique et de Microélectronique du Nord, USTL, Avenue Poincaré BP 69, F-59652 Villeneuve, d´´Ascq Cedex, France. Email: Xavier.Mélique@IEMN.univ-Lillel.fr
  • Volume
    2
  • fYear
    1999
  • fDate
    Oct. 1999
  • Firstpage
    113
  • Lastpage
    116
  • Abstract
    Record performances were demonstrated in terms of output power (>9 mW) and conversion efficiency (12%) for a 250 GHz Heterostructure Barrier Varactor tripler. These excellent performances can be explained by the highly non linear capacitance-voltage characteristics of InGaAs/InAlAs/AlAs diodes having a zero-bias capacitance of 1fF/¿m2, a capacitance ratio of 6:1 and a breakdown voltage of 12 V.
  • Keywords
    Capacitance; Capacitance-voltage characteristics; Doping; Gallium arsenide; Indium compounds; Indium gallium arsenide; Indium phosphide; Power generation; Semiconductor diodes; Varactors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1999. 29th European
  • Conference_Location
    Munich, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1999.338423
  • Filename
    4139452
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2147363