• DocumentCode
    2147381
  • Title

    Low-temperature processed polycrystalline silicon thin-film transistor with aluminum-replaced source and drain regions

  • Author

    Zhang, Dongli ; Kwok, Hoi-Sing ; Wong, Man

  • Author_Institution
    Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    974
  • Lastpage
    977
  • Abstract
    Low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with metal-replaced source and drain regions have been fabricated and characterized. Several technological schemes for replacing poly-Si with aluminum have been investigated and the relative merits of each are compared.
  • Keywords
    aluminium; elemental semiconductors; low-temperature techniques; semiconductor thin films; silicon; thin film transistors; aluminum-replaced source-drain regions; low-temperature processed polycrystalline silicon TFT; thin-film transistor; Active matrix technology; Aluminum; Artificial intelligence; Displays; Electrodes; Fabrication; Silicon; Substrates; Temperature; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734706
  • Filename
    4734706
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2147381