• DocumentCode
    2147384
  • Title

    A New Approach to Prevent the Burnout Under Mismatching Load Conditions in High Power HBT

  • Author

    Suzuki, S. ; Yamamoto, K. ; Asada, T. ; Choumei, K. ; Inoue, A. ; Hattori, R. ; Yoshida, N. ; Shimura, T.

  • Author_Institution
    High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan. Tel: +81-727-84-7238, Fax: +81-727-80-2690, E-mail: ssuzuki@lsi.melco.co.jp
  • Volume
    2
  • fYear
    1999
  • fDate
    Oct. 1999
  • Firstpage
    117
  • Lastpage
    120
  • Abstract
    This paper describes a burnout mechanism in high power KBT under mismatching load conditions. Experimental and analytical investigations reveal that the burnout of the HBT is caused by a large amount of base current resulting from avalanche breakdown in a collector-base junction, especially in the case of constant base voltage drive usually employed in high power operation. Based on the investigation, an active feedback circuit is newly proposed to prevent the catastrophic failure, and then the effectiveness of the circuit was successfully confirmed by simulation and experiments.
  • Keywords
    Circuit testing; Electrical resistance measurement; Failure analysis; Feedback circuits; Heterojunction bipolar transistors; High power amplifiers; Optical amplifiers; Radio frequency; Thermal resistance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1999. 29th European
  • Conference_Location
    Munich, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1999.338424
  • Filename
    4139453