DocumentCode
2147384
Title
A New Approach to Prevent the Burnout Under Mismatching Load Conditions in High Power HBT
Author
Suzuki, S. ; Yamamoto, K. ; Asada, T. ; Choumei, K. ; Inoue, A. ; Hattori, R. ; Yoshida, N. ; Shimura, T.
Author_Institution
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan. Tel: +81-727-84-7238, Fax: +81-727-80-2690, E-mail: ssuzuki@lsi.melco.co.jp
Volume
2
fYear
1999
fDate
Oct. 1999
Firstpage
117
Lastpage
120
Abstract
This paper describes a burnout mechanism in high power KBT under mismatching load conditions. Experimental and analytical investigations reveal that the burnout of the HBT is caused by a large amount of base current resulting from avalanche breakdown in a collector-base junction, especially in the case of constant base voltage drive usually employed in high power operation. Based on the investigation, an active feedback circuit is newly proposed to prevent the catastrophic failure, and then the effectiveness of the circuit was successfully confirmed by simulation and experiments.
Keywords
Circuit testing; Electrical resistance measurement; Failure analysis; Feedback circuits; Heterojunction bipolar transistors; High power amplifiers; Optical amplifiers; Radio frequency; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1999. 29th European
Conference_Location
Munich, Germany
Type
conf
DOI
10.1109/EUMA.1999.338424
Filename
4139453
Link To Document