Influences of external parameters on low pressure MOVPE growth results of InP based materials

Author

Beccard, B. ; Michel, W. ; Lengeling, G. ; Schmitz, D. ; Juergensen, H.

Author_Institution

AIXTRON Semicond. Technol. GmbH, Aachen, Germany

fYear

1994

fDate

27-31 Mar 1994

Firstpage

126

Lastpage

129

Abstract

The optimization of growth parameters for uniform deposition of GaInAs(P) compounds on InP has been topic of many reactor design studies up to the present. In most cases geometrical design provided optimization for only one of the compositional spectrum range of the Ga-In-As-P material family. The approaches were to compensate thermal distribution nonuniformities on the susceptors. These particularly cause compositional nonuniformities related to the temperature dependence in Ga/In or As/P distribution coefficients. This study was performed to get insight into the kinetic and transport processes in MOVPE reactors to have a general improvement for the entire material group of the InP based compound materials

Keywords

III-V semiconductors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; Ga-In-As-P; GaInAs; GaInAsP; InP; InP based materials; compositional nonuniformities; distribution coefficients; growth parameter optimization; kinetic processes; low pressure MOVPE growth; reactor design; susceptors; thermal distribution nonuniformities; transport processes; uniform deposition; Cooling; Epitaxial growth; Epitaxial layers; Fluid flow; Heating; Indium phosphide; Inductors; Lattices; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328178

Filename

328178