Title :
Aging behavior of InP substrates prepared with 2 different epi-ready processes
Author :
Regreny, P. ; Jacob, G. ; Gendry, M. ; Hollinger, G. ; Gauneau, M. ; Lecrosnier, W. ; Benyattou, T.
Author_Institution :
Crismatec InPact, Moutiers, France
Abstract :
In this work we investigate the aging behavior of InP substrates prepared with 2 different epi-ready processes based on “thin” 4-5 Å and “thick” 7-8 Å oxide layers. The oxide layers are characterized by X-ray photoelectron spectroscopy (XPS) after storage in both air and nitrogen. While there is no variation of the oxide thickness when substrates are stored under nitrogen, for a “thin” 4-5 Å oxide layer stored in air, the oxide thickness increases with time. However the photoluminescence behavior of MBE grown InAs/AlInAs quantum wells localised near the interface and SIMS profiles show no aging effect after 6 months if an optimized oxide desorption procedure (In stabilization of the surface) is used
Keywords :
III-V semiconductors; X-ray photoelectron spectra; ageing; indium compounds; oxidation; photoluminescence; protective coatings; substrates; 4 to 8 A; In stabilization; InP; InP substrates; InP-InO; MBE grown InAs/AlInAs quantum wells; N2 storage; SIMS profiles; X-ray photoelectron spectroscopy; XPS; aging behavior; air storage; epi-ready processes; optimized oxide desorption procedure; oxide layers; oxide thickness; photoluminescence behavior; Aging; Indium phosphide; Molecular beam epitaxial growth; Nitrogen; Oxidation; Photoluminescence; Protection; Spectroscopy; Substrates; Surface contamination;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328179
