Flexible plastic single-crystal si CMOS

Author

Ma, Zhenqiang ; Yuan, Hao-Chih ; Celler, George K.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Wisconsin-Madison, Madison, WI, USA

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1009

Lastpage

1012

Abstract

In this paper, the materials, processing and device characteristics of flexible Si CMOS on plastic substrates are reviewed. The methods to create transferrable single-crystal Si nanomembranes are described first followed by the description of doping and transfer techniques developed for the nanomembranes. The preliminary device characteristics of CMOS and inverters on plastic substrates are presented.

Keywords

MOSFET; elemental semiconductors; flexible electronics; invertors; nanoelectronics; nanofabrication; semiconductor doping; silicon; substrates; Si; doping techniques; flexible plastic single-crystal CMOS device; inverters; plastic substrates; transferrable nanomembrane device characteristics; CMOS process; Drives; Germanium silicon alloys; Inverters; Nanoscale devices; Plastics; Semiconductor materials; Silicon germanium; Strips; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734723

Filename

4734723

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2147804