Title :
Application of the Finite Element Method to FET Model Parasitic Lumped Elements Extraction
Author :
Larique, E. ; Baillargeat, D. ; Verdeyme, S. ; Aubourg, M. ; Teyssier, J.P. ; Guillon, P. ; Zanchi, C. ; Sombrin, J.
Author_Institution :
IRCOM Faculté des Sciences de Limoges 87060 Limoges Cedex FRANCE. Email: larique@ircom.unilim.fr
Abstract :
A classical method to compute Field Effect Transistor (FET) response is the lumped elements model. This equivalent circuit is composed of several elements which characterize the active and/or passive part of the device. We present in this paper an application of the Finite Element Method (FEM) to obtain the FET model extrinsic elements. This method requires 2D and 3D electromagnetic (EM) simulations and replaces the additional measurements at zero drain bias voltage usually used.
Keywords :
Circuit simulation; Computational modeling; Electrodes; Electromagnetic coupling; Electromagnetic measurements; Equivalent circuits; Finite element methods; Microwave FETs; Parasitic capacitance; Voltage;
Conference_Titel :
Microwave Conference, 1999. 29th European
Conference_Location :
Munich, Germany
DOI :
10.1109/EUMA.1999.338450
