The comprehensive study of liquid phase oxidation on GaAs-based transistor applications

Author

Wang, Yeong-Her

Author_Institution

Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1082

Lastpage

1085

Abstract

The GaAs-based HEMTs with gate oxide and HBTs with surface passivation prepared by liquid phase oxidation (LPO) will be demonstrated. As compared to the Schottky-gate HEMTs, the lower gate leakage currents, higher breakdown voltages, and improved RF performances make the proposed technique suitable for high-power and high-speed applications. Moreover, the HBTs with oxide passivation possess the characteristics of lower surface recombination currents, higher breakdown voltage, and improved higher dc current gain.

Keywords

III-V semiconductors; Schottky gate field effect transistors; electric breakdown; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; GaAs; HBT; Schottky-gate HEMT; breakdown voltages; dc current gain; liquid phase oxidation; lower gate leakage currents; surface passivation; Etching; Gallium arsenide; HEMTs; Impact ionization; Indium gallium arsenide; Leakage current; MODFETs; Oxidation; Passivation; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734739

Filename

4734739