Evidence of mobile holes on GaN HFET barrier layer surface - root cause of high power transistoramplifier current collapse

Author

Wen, Cheng P. ; Wang, Jinyan ; Hao, Yilong ; Zhang, Yaohui ; Lau, Keimay ; Tang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1090

Lastpage

1093

Abstract

Evidence of mobile, positive charges (holes) on the top surface of GaN HFET is found by conducting C-V measurement of a MIS HEMT diode. Significantly improved understanding of the effects of built-in electric polarization and doping on III-nitride heterojunction device structure electrical properties has been made. The result also confirms that removal of surface mobile holes is the root cause for high power GaN HEFT current collapse.

Keywords

MIS devices; gallium compounds; high electron mobility transistors; power amplifiers; power semiconductor diodes; power transistors; C-V measurement; GaN; HFET barrier layer surface; III-nitride heterojunction device; MIS HEMT diode; built-in electric polarization; high power transistor amplifier current collapse; positive charges; surface mobile holes; Breakdown voltage; Capacitance-voltage characteristics; Current measurement; Dielectric measurements; Gallium nitride; HEMTs; MODFETs; Optical polarization; Semiconductor diodes; Slabs;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734741

Filename

4734741