Low loss corner mirrors in InP/InGaAsP/InP for integrated optics etched with chlorinated gases

Author

Schneider, J. ; Moser, M. ; Affolter, K.

Author_Institution

Dept. of Res. & Dev., Swiss Telecom PTT, Bern, Switzerland

fYear

1994

fDate

27-31 Mar 1994

Firstpage

216

Lastpage

219

Abstract

Integrated corner mirrors with 90° deflection angle have been produced in InP/InGaAsP/InP by etching with SiCl₄/Cl₂ at temperatures between 220°C and 280°C in a magnetron ion etching system. In contrast to CH₄/H₂-etch-processes applied to InP/InGaAsP, our process results in etched sidewalls with a morphology which is independent of the semiconductor material composition. Very smooth surfaces and losses as low as 0.45 dB per mirror at 1.3 μm wavelength and 0.4 dB at 1.53 μm wavelength were achieved. Two different types of positive resist and a tri-layer resist scheme were used as etch masks. A UV-hardening procedure was applied to make the resists resistant to the elevated etch temperature

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; masks; mirrors; optical losses; optical workshop techniques; photoresists; sputter etching; 0.4 dB; 0.45 dB; 1.3 micron; 1.53 micron; 220 to 280 C; Cl₂; InP-InGaAsP-InP; SiCl₄; UV-hardening; chlorinated gases; corner mirrors; etch masks; integrated optics; losses; magnetron ion etching; positive resist; semiconductor material; sidewall morphology; smooth surfaces; tri-layer resist; Etching; Indium phosphide; Integrated optics; Magnetic semiconductors; Mirrors; Morphology; Optical losses; Resists; Semiconductor materials; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328201

Filename

328201