DocumentCode
2148592
Title
Millimeter-Wave Flip-Chip Front-End IC and Power Amplifier Using MBB Technology
Author
Maeda, Masahiro ; Sakai, Hiroyuki
Author_Institution
Electronics Research Laboratory, Matsushita Electronics Corporation, E-mail: maeda@oerl.src.mei.co.jp
Volume
2
fYear
1999
fDate
Oct. 1999
Firstpage
305
Lastpage
308
Abstract
This paper describes concepts and performance of millimeter-wave flip-chip IC and power amplifier using MBB (Micro Bump Bonding) technology. Two types of flip-chip technologies, MFIC (Millimeter-wave Flip-chip IC) and MBS (Micro Bump on Source electrode) technologies are introduced, and their applications to a K-band receiver front-end IC and a K-band power amplifier are presented.
Keywords
Bonding; Costs; Dielectric losses; Electrodes; Insertion loss; MMICs; Millimeter wave technology; Power amplifiers; Resins; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1999. 29th European
Conference_Location
Munich, Germany
Type
conf
DOI
10.1109/EUMA.1999.338361
Filename
4139501
Link To Document