Title :
High bandwidth InAlAs/InGaAs PIN-HBT monolithically integrated photoreceiver
Author :
Gutierrez-Aitken, A.L. ; Cowles, J. ; Bhattacharya, P. ; Haddad, G.I.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
A monolithically integrated photoreceiver using an InAlAs/InGaAs HBT-based transimpedance amplifier has been fabricated and characterized. The p-i-n photodiode is implemented using the base-collector junction of the HBT. The 5 μm×5 μm emitter area transistors have self-aligned base metal and nonalloyed Ti/Pt/Au contacts. Discrete transistors demonstrated fT and fmax of 54 GHz and 51 GHz, respectively. The amplifier demonstrated an effective transimpedance bandwidth of 10 GHz and a gain of 40 dBΩ. The integrated photoreceiver with a 10 μm×10 μm p-i-n photodiode showed a -3 dB bandwidth of 7.1 GHz
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; wideband amplifiers; 10 GHz; 51 GHz; 54 GHz; 7.1 GHz; OEIC; PIN-HBT monolithically integrated photoreceiver; Ti-Pt-Au-InGaAs-InAlAs; base-collector junction; broadband type; high bandwidth; nonalloyed Ti/Pt/Au contacts; p-i-n photodiode; self-aligned base metal; transimpedance amplifier; wideband operation; Absorption; Bandwidth; Diodes; Fabrication; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Molecular beam epitaxial growth; Photodiodes; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328213
