• DocumentCode
    2149164
  • Title

    Breakdown mechanisms in the on-state mode of operation of InAlAs/In xGa1-xAs pseudomorphic HEMTs

  • Author

    Dickmann, J. ; Schildberg, S. ; Geyer, A. ; Maile, B.E. ; Schurr, A. ; Heuthe, S. ; Narozny, P.

  • Author_Institution
    Res. Center, Daimler-Benz AG, Ulm, Germany
  • fYear
    1994
  • fDate
    27-31 Mar 1994
  • Firstpage
    335
  • Lastpage
    338
  • Abstract
    A systematic investigation on the breakdown mechanisms in the on-state mode of operation of pseudomorphic InAlAs/InxGa1-xAs (0.53<x<0.7) HEMTs is presented. From temperature- and composition dependent measurements and burn-out experiments it is demonstrated that on-state breakdown in these devices is dominated by impact ionization and that the location of on state breakdown is the channel layer. The on-state breakdown voltage drops with increasing indium mole fraction in the channel layer
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; InAlAs-InGaAs; InAlAs/InxGa1-xAs pseudomorphic HEMTs; breakdown mechanisms; burn-out; composition dependent measurements; impact ionization; on-state mode; temperature-dependent measurements; Breakdown voltage; Electric breakdown; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Lattices; MODFETs; PHEMTs; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-1476-X
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1994.328238
  • Filename
    328238
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2149164