RF measurement of impact ionization and its temperature dependence in AlSb/InAs HEMTs

Author

Kruppa, W. ; Boos, J.B.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

1994

fDate

27-31 Mar 1994

Firstpage

339

Lastpage

342

Abstract

The RF characteristics of impact ionization in AlSb/InAs HEMTs were examined by measuring the behavior of S₂₂ in the frequency range from 300 kHz to 3 GHz. By varying the drain bias, the onset of impact ionization can be clearly observed. In the ionization region, high gate current, inductive output impedance, current instability with hysteresis, and an increase in low-frequency noise were observed. With decreasing temperature, these effects diminish. The results were compared with measurements made on InAlAs/InGaAs/InP HEMTs. In both transistors, impact ionization as well as deep-level trapping were observed

Keywords

III-V semiconductors; aluminium compounds; deep levels; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device noise; 300 kHz to 3 GHz; AlSb-InAs; AlSb/InAs HEMTs; RF characteristics; current instability; deep-level trapping; gate current; hysteresis; impact ionization; inductive output impedance; low-frequency noise; temperature dependence; Frequency measurement; HEMTs; Hysteresis; Impact ionization; Impedance; Indium compounds; Low-frequency noise; MODFETs; Radio frequency; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328239

Filename

328239