• DocumentCode
    2149252
  • Title

    Radiation Testing Results for the Intersil ISL71590SEH Temperature Sensor

  • Author

    van Vonno, N.W. ; Turner, S.D. ; Thomson, E.J. ; Williams, Barry ; Schulte, S.J. ; Gough, L.G. ; Shick, J.E.

  • Author_Institution
    Intersil Corp., Palm Bay, FL, USA
  • fYear
    2013
  • fDate
    8-12 July 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We report the results of low and high dose rate 60Co total dose testing of the Intersil ISL71590SEH integrated temperature sensor together with a brief discussion of the part´s electrical specifications and wafer fabrication process. We also report data for the part´s performance in the single-event effects (SEE) and displacement damage (DD) environments. The part is shown to offer significantly improved hardness as compared to current industry standard temperature sensors.
  • Keywords
    dosimeters; integrated circuit testing; temperature sensors; wafer-scale integration; DD environment; Intersil ISL71590SEH integrated temperature sensor; SEE; displacement damage; part electrical specification; radiation testing; single event effect; total dose testing; wafer fabrication process; Kelvin; Neutrons; Power supplies; Radiation effects; Temperature; Temperature sensors; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2013 IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4799-1136-3
  • Type

    conf

  • DOI
    10.1109/REDW.2013.6658203
  • Filename
    6658203
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2149252