Processing and design techniques for InGaAs/InAlAs/InP photoFETs and MSMs

Author

Martin, E.A. ; Vaccaro, K. ; Waters, W. ; Spaziani, S. ; Lorenzo, J.P. ; Robinson, G.

Author_Institution

Rome Lab., Hanscom AFB, MA, USA

fYear

1994

fDate

27-31 Mar 1994

Firstpage

347

Lastpage

350

Abstract

Despite the theoretical advantages of InGaAs/InAlAs/InP photoFETs for electro-optical system applications, fully optimized device structures and processing protocols have yet to be developed. We report here results from several device variations directed toward such optimization. This includes variation of HEMT channel thickness and current density, grading of the hole-blocking InGaAs/InAlAs heterojunction. A novel substrate removal process with backside illumination, and frontside and backside passivation is explored for optimized discrete components as well as integrated devices. Many of these advances are applicable to both MSM photodetectors and photoFETs; results from each are presented

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; passivation; photodetectors; phototransistors; HEMT channel thickness; InGaAs-InAlAs-InP; MSM photodetectors; backside illumination; backside passivation; current density; design techniques; frontside passivation; hole-blocking InGaAs/InAlAs heterojunction; photoFETs; substrate removal process; Current density; Electrooptic devices; HEMTs; Heterojunctions; Indium compounds; Indium gallium arsenide; Indium phosphide; Lighting; Process design; Protocols;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328241

Filename

328241