• DocumentCode
    2149274
  • Title

    Radiation Tolerant MESFET-CMOS Low Dropout Linear Regulator for Integrated Power Management at the 45nm Node

  • Author

    Thornton, Trevor J. ; Lepkowski, William ; Wilk, Seth J. ; Goryll, Michael ; Bo Chen ; Kam, Jason ; Bakkaloglu, Bertan ; Holbert, Keith

  • Author_Institution
    Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA
  • fYear
    2013
  • fDate
    8-12 July 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A low dropout linear regulator comprising a MESFET pass transistor with an integrated CMOS error amplifier has been fabricated using a commercial 45nm SOI foundry. Good regulation is observed after irradiation to 1 Mrad(Si).
  • Keywords
    CMOS integrated circuits; MESFET integrated circuits; radiation hardening (electronics); voltage regulators; MESFET pass transistor; MESFET-CMOS linear regulator; SOI foundry; integrated CMOS error amplifier; integrated power management; low dropout linear regulator; radiation tolerant linear regulator; size 45 nm; voltage 1.8 V; CMOS integrated circuits; Logic gates; MESFETs; Regulators; Voltage control; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2013 IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4799-1136-3
  • Type

    conf

  • DOI
    10.1109/REDW.2013.6658204
  • Filename
    6658204
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2149274