Title :
Production-worthy approach of plasma doping (PD)
Author :
Mizuno, B. ; Sasaki, Yutaka ; Jin, C.G. ; Okashita, K. ; Nakamoto, K. ; Kitaoka, Toshiro ; Tsutsui, K. ; Sauddin, H.A. ; Iwai, Hisato
Author_Institution :
Ultimate Junction Technol. Inc., Moriguchi, Japan
Abstract :
Semiconductors have been successfully produced by the miniaturization of planar transistors and their transformation into a 3D structure. This innovation will realize ideal performance in electric devices. In this article, plasma doping combined with He plasma amorphization (He-PA) and several state-of-the-art rapid thermal processing is shown to be a technology for enabling the fabrication of miniaturized 2D devices and advanced 3D structures.
Keywords :
amorphisation; elemental semiconductors; plasma materials processing; rapid thermal annealing; semiconductor doping; silicon; He plasma amorphization; He-PA process; Si; annealing; plasma doping; rapid thermal processing; semiconductors doping; silicon substrate; Annealing; CMOS technology; Ion implantation; Plasma accelerators; Plasma density; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Plasma temperature; Semiconductor device doping;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734785
