Nonvolatile resistive memory devices based on hydrogenated amorphous carbon

Author

Dellmann, L. ; Sebastian, Aradoaei ; Jonnalagadda, P. ; Santini, C.A. ; Koelmans, W.W. ; Rossel, C. ; Eleftheriou, Evangelos

Author_Institution

IBM Res. - Zurich, Rüschlikon, Switzerland

fYear

2013

fDate

16-20 Sept. 2013

Firstpage

268

Lastpage

271

Abstract

There has recently been increased interest in carbon-based resistive random-access (RRAM) memory. Carbon-based RRAM has the potential to scale to atomic dimensions, resulting in ultra-high-density and low-power memory. Here we report reversible unipolar resistance switching in hydrogenated amorphous carbon. The devices used in this study are fabricated using e-beam lithography with built-in series resistors. A thorough analysis of the electrical transport and the resistance switching mechanism is presented.

Keywords

amorphous semiconductors; carbon; electron beam lithography; hydrogenation; random-access storage; resistors; C; atomic dimensions; built-in series resistors; carbon-based RRAM; carbon-based resistive random-access; e-beam lithography; electrical transport; hydrogenated amorphous carbon; low-power memory; nonvolatile resistive memory devices; reversible unipolar resistance switching; scale dimensions; ultra-high-density; Carbon; Electrodes; Materials; Resistance; Resistors; Switches; Threshold voltage; amorphous carbon; graphitic memory; nonvolatile resistive memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European

Conference_Location

Bucharest

Type

conf

DOI

10.1109/ESSDERC.2013.6818870

Filename

6818870