Growth of ⟨100⟩ InP single crystals by the liquid encapsulated vertical Bridgman method using a flat-bottom crucible

Author

Matsumoto, Fumio ; Okano, Yasunori ; Yonenaga, Ichiro ; Hoshikawa, Keigo ; Rudolph, Peter ; Fukuda, Tsuguo

Author_Institution

Chichibu Works, Showa Denko KK, Saitama, Japan

fYear

1994

fDate

27-31 Mar 1994

Firstpage

367

Lastpage

370

Abstract

⟨100⟩InP crystals with a diameter of 50 mm were grown by the liquid encapsulated vertical Bridgman method using a flat-bottom crucible. Twin-free undoped and S-doped single crystals were reproducibly obtained using a seed of the same diameter. In the case of undoped crystals the EPD level was decreased below 10⁴ cm^-2. Dislocation free cores in S-doped crystals (>3×10¹⁸ cm^-3 have been obtained. The radial EPD profile is affected by the seed crystal. Computer calculations of the interface curvature have been provided

Keywords

III-V semiconductors; crystal growth from melt; indium compounds; semiconductor growth; EPD level; InP; S-doped single crystals; dislocation free cores; etch pit density; flat-bottom crucible; interface curvature; liquid encapsulated vertical Bridgman method; radial EPD profile; seed crystal; twin-free undoped single crystals; Computer interfaces; Containers; Crystalline materials; Crystallization; Etching; Indium phosphide; Liquid crystals; Photonic crystals; Shape; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328246

Filename

328246