Low-power 71 GHz static frequency divider in SiGe:C HBT technology

Author

Li Wang ; Borngraeber, J. ; Gang Wang ; Zheng Gu ; Thiede, A.

Author_Institution

IHP GmbH, Frankfurt, Germany

fYear

2005

fDate

12-17 June 2005

Abstract

71.5 GHz static and 84 GHz dynamic frequency dividers fabricated in 0.25 μm SiGe:C HBT technology with f_T/f_max 200 GHz are presented. The static divider including the buffer works with a 3.5 V single supply voltage and consumes 140 mW with 42 mW for the master-slave flip-flop (FF). The high speed/power ratio compared with those of other technologies makes it attractive for high-frequency wireless communication systems. The regenerative dynamic divider consumes 220 mW with 5.5 V voltage supply.

Keywords

frequency dividers; heterojunction bipolar transistors; low-power electronics; millimetre wave bipolar transistors; mobile communication; 0.25 micron; 140 mW; 220 mW; 3.5 V; 42 mW; 5.5 V; 71 GHz; 84 GHz; HBT technology; SiGe:C; dynamic frequency dividers; low-power frequency divider; master-slave flip-flop; regenerative dynamic divider; static frequency divider; wireless communication systems; Energy consumption; Flip-flops; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Latches; Master-slave; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2005 IEEE MTT-S International

ISSN

01490-645X

Print_ISBN

0-7803-8845-3

Type

conf

DOI

10.1109/MWSYM.2005.1516517

Filename

1516517