Implant isolation and dry etching of InN

Smooth, anisotropic dry etching of InN layers is demonstrated in low pressure (1-30 Torr) CH₄/H₂, Cl₂/H ₂ or CCl₂F₂/Ar Electron Cyclotron Resonance discharges with additional dc biasing of the sample. Increasing the applied microwave power produces significant enhancements in etch rate. The presence of H₂ or F₂ in the gas chemistries is necessary to facilitate equi-rate removal of the group III and nitrogen etch products, leading to smooth surface morphologies. F⁺ implantation at doses of ~10¹⁵ cm^-2 produces sheet resistances >5×10³ Ω/□ in initially degenerately n⁺(4×10²⁰ cm^-3) InN, and values >10⁶ Ω/□ in lower-doped (⩽3×10¹⁹ cm^-3) ternary alloys InGaN and InAlN