Title :
Analysis of T0 in 1.3 μm multi-quantum well and bulk active lasers
Author :
Ackerman, D.A. ; Morton, P.A. ; Kazarinov, R.F. ; Tanbun-Ek, T. ; Logan, R.A.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Temperature dependence of threshold current in 1.3 μm semiconductor lasers is investigated via measurement and analysis of sub-threshold current, gain, loss and injection efficiency as a function of carrier density. Rapid increase of transparency carrier density and decrease of differential gain with temperature are found to dominate the threshold temperature sensitivity
Keywords :
carrier density; optical losses; semiconductor lasers; transparency; 1.3 micron; bulk active lasers; characteristic temperature; differential gain; injection efficiency; loss; multi-quantum well lasers; sub-threshold current; temperature dependence; threshold current; transparency carrier density; Carrier confinement; Charge carrier density; Current measurement; Distributed feedback devices; Loss measurement; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature dependence; Temperature sensors;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328271
