InP based carbon-doped base HBT technology: its recent advances and circuit applications

Author

Song, J.I. ; Hong, Brian W P ; PalmstrØm, Chris J. ; Chough, K.B.

Author_Institution

Bellcore, Red Bank, NJ, USA

fYear

1994

fDate

27-31 Mar 1994

Firstpage

523

Lastpage

526

Abstract

Recent advances of carbon-doped InP/In_0.53Ga_0.47As singleand double-heterojunction bipolar transistor (SHBT and DHBT) technology, are reviewed. Chemical beam epitaxy (CBE) has been utilized to grow the device structures. Up to date, the SHBT having two 1.5 μm×10 μm emitter fingers has exhibited f_T and f_max(MAG) of 186 GHz and 90 GHz, respectively. To our knowledge, the f_T of this device is the highest of any type of bipolar transistors yet reported. CW output power of 0.4 W (3.5 W/mm) with power-added efficiency of 36% has been achieved with the 12-finger DHBTs. The SMBT technology has been applied to realization of wideband amplifiers. A simple directly-coupled amplifier has shown a 3-dB bandwidth of over 20 GHz. The results indicate the great potential of carbon-doped base InP/InGaAs HBTs for high-speed and microwave applications

Keywords

III-V semiconductors; carbon; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; indium compounds; power transistors; solid-state microwave devices; 0.4 W; 186 GHz; 20 GHz; 36 percent; 90 GHz; CBE; DHBT; InP based HBT technology; InP-In_0.53Ga_0.47As:C; SHBT; carbon-doped base HBT; chemical beam epitaxy; double-heterojunction bipolar transistor; high-speed applications; microwave applications; single-heterojunction bipolar transistor; wideband amplifiers; Bipolar transistors; Broadband amplifiers; Chemical technology; Epitaxial growth; Fingers; Heterojunction bipolar transistors; Indium phosphide; Molecular beam epitaxial growth; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328284

Filename

328284