Title :
A 900MHz UHF RFID reader transceiver in 0.18μm CMOS technology
Author :
Ye, Le ; Liao, Huailin ; Song, Fei ; Chen, Jiang ; Xiao, Huilin ; Liu, Ruiqiang ; Liu, Junhua ; Wang, Xinan ; Wang, Yangyuan
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Peking, China
Abstract :
This paper presents a UHF band (840 MHz~925 MHz) RFID reader transceiver design for the protocols of EPC Class-1 Gen-2 and ISO/IEC 18000-6C. The architecture and modules for the proposed transceiver are described and implemented in a standard 0.18 μm CMOS process. To suppress the leakage signal from transmitter to receiver, directional coupler and leakage cancellation circuit are introduced in the transceiver. A mixer with common-gate capacitor-cross-coupled input stage and vertical NPN switching stage is introduced to satisfy wideband matching and reduce 1/f noise corner. The transceiver, with an on-chip power-amplifier (PA) driver to drive off-chip PA, supports DSB-ASK, SSB-ASK and PR-ASK modulation schemes. A sigma-delta PLL is also implemented for 250 kHz channel hopping. Measurement results are given. Mixer achieves -8dBm P1 dB and 6.25 dB noise figure, phase noise of PLL is -127 dBc/Hz @ 1 MHz offset and settling time of channel hopping is within 30 μs. Settling time of killing leakage is less than 15 μs. The sensitivity of receiver can be -81dBm @ 40 kHz link frequency (LF). The total silicon area of the transceiver is 13 mm2, and draws 75 mA for 1.8 V supply voltage.
Keywords :
CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; UHF mixers; amplitude shift keying; phase locked loops; phase noise; power amplifiers; radiofrequency identification; transceivers; 1/f noise corner; CMOS technology; DSB-ASK modulation; EPC Class-1 Gen-2; ISO/IEC 18000-6C; PR-ASK modulation schemes; SSB-ASK modulation; UHF RFID reader transceiver; channel hopping; common-gate capacitor-cross-coupled input stage; current 75 mA; frequency 1 MHz; frequency 250 kHz; frequency 40 kHz; frequency 900 MHz; leakage cancellation circuit; leakage signal suppression; link frequency; mixer; noise figure 6.25 dB; on-chip power-amplifier; phase noise; receiver sensitivity; sigma-delta PLL; size 0.18 mum; time 30 mus; vertical NPN switching stage; voltage 1.8 V; wideband matching; CMOS process; CMOS technology; Directional couplers; IEC standards; ISO standards; Phase locked loops; Protocols; Radiofrequency identification; Transceivers; Transmitters;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734857