Title :
Optical effect of the characteristics of buried gat e MESFET
Author :
Jaya, T ; Kannan, V
Author_Institution :
Eleclronics and Communicalion Engg; Salhyabama Universily, Chennai, India
Abstract :
DC characteristics of buried-gate GaAs MESFETs are studied by solvifg dc coftifuity equatiof. This afalysis ifcludifg surface states afd the iof implafted buri ed-gate process. It is showf that the curreft- voltage coul d be rather ifcreased whef iftroducifg af optical light to the buried-gate GaAs MESFETs structure. The photo -voltage characteristics afd the chaffel cofductafce of the device have beef evaluated. The results ifdicate very good performafce of the d evice compared to other devices like MESFET ufder back illumifatiof afd MESFET with froft illumifatiof hav ifg surface gate. Buried-gate optical field effect traf sistor (OPFET) will be highly suitable for optical commuficatiof a fd optical computifg.
Keywords :
Absorption; FETs; Gallium arsenide; Lighting; MESFETs; Ohmic contacts; Optical fiber communication; Particle beam optics; Substrates; Voltage; Depletion-mode MESFET (D-MESFET); Enhancement-mode (EMESFET); Metal Field Effect Transistor (MESFET); optical field effect transistor (OPFET);
Conference_Titel :
Computer and Automation Engineering (ICCAE), 2010 The 2nd International Conference on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5585-0
Electronic_ISBN :
978-1-4244-5586-7
DOI :
10.1109/ICCAE.2010.5451306
