DocumentCode :
2152706
Title :
Analysis of DC-RF dispersion in AlGaN/GaN HFETs using pulsed I-V and time-domain waveform measurements
Author :
McGovern, Peter ; Benedikt, Johannes ; Tasker, Paul J. ; Powell, J. ; Hilton, K.P. ; Glasper, J.L. ; Balmer, R.S. ; Martin, T. ; Uren, M.J.
Author_Institution :
Cardiff Sch. of Eng., Cardiff Univ., UK
fYear :
2005
fDate :
12-17 June 2005
Abstract :
AlGaN/GaN HFETs have been analyzed using pulsed I-V measurements and RF time-domain measurements in an attempt to analyze the phenomenon of DC-RF dispersion and achieve maximum RF performance. The pulsed I-V measurements exhibited the common problem of current slump, as did the RF power performance of the device. The RF time-domain waveforms are used to show that the RF knee-walkout increases with drain bias voltage, thus negating any improved power and efficiency performance that a larger voltage swing would achieve. It was also found that the degree of RF knee-walkout changes depending on the class of operation of the device. Although current slump is evident, it is not permanent, and there is negligible degradation of the device after prolonged RF stimulus.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; semiconductor device measurement; time-domain analysis; waveform analysis; wide band gap semiconductors; AlGaN-GaN; DC-RF dispersion; RF knee-walkout; RF power performance; RF time domain waveforms; current slump problem; heterojunction field effect transistors; pulsed I-V measurement; pulsed time-domain waveform measurements; Aluminum gallium nitride; Current slump; Dispersion; Gallium nitride; HEMTs; MODFETs; Performance analysis; Pulse measurements; Radio frequency; Time domain analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
ISSN :
01490-645X
Print_ISBN :
0-7803-8845-3
Type :
conf
DOI :
10.1109/MWSYM.2005.1516641
Filename :
1516641
Link To Document :
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