Title :
Diode-pumped semiconductor disk laser
Author :
Schiehlen, E. ; Antritter, Felix ; Unger, Peter
Author_Institution :
Dept. of Optoelectronics, Ulm Univ., Germany
Abstract :
Diode-pumped semiconductor disk lasers are based on the principle of diode-pumped solid-state disk lasers. This relatively new type of laser is also referred to as VECSEL (vertical external cavity surface emitting laser). Semiconductor disk lasers show excellent beam characteristics in combination with high output power. With this novel approach, the current injection problems of VCSELs and the facet degradation effects of edge-emitting lasers due to the high optical intensities at the laser mirrors can be overcome. Furthermore the external cavity of the disk laser can be equipped with additional elements such as nonlinear crystals for frequency doubling, In this paper we present an InAlGaAs-based semiconductor disk laser with intracavity frequency doubling having an output power of 23 m W at 491 nm.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser mirrors; optical harmonic generation; optical materials; optical pumping; semiconductor lasers; surface emitting lasers; 23 W; 491 nm; InAlGaAs; beam characteristics; current injection problems; diode-pumped laser; edge-emitting lasers; external cavity; facet degradation effects; frequency doubling; high optical intensities; high output power; intracavity frequency doubling; laser mirrors; nonlinear crystals; semiconductor disk laser; vertical external cavity surface emitting laser; Frequency; Laser beams; Power generation; Power lasers; Semiconductor diodes; Semiconductor lasers; Solid lasers; Solid state circuits; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237181