Title :
Zinc oxide as a contact material for p-GaN
Author :
Kaminska, E. ; Piotrowska, A. ; Barcz, A. ; Golaszewska, K. ; Kuchuk, A. ; Szade, J. ; Winiarski, A. ; Wawro, A. ; Jasinski, J. ; Liliental-Weber, Z.
Author_Institution :
Inst. of Electron Technol., Warsaw, Poland
Abstract :
The fabrication procedure of transparent and conducting ZnO films yielding ohmic contacts to p-GaN has been developed. The microstructure and electronic properties of p-GaN/ZnO interface were studied using atomic force and electron transmission microscopies, and X-ray photoelectron spectrometry. The observed ohmic behaviour is explained in terms of formation of a tunnelling p-GaN/ n+-ZnO junction.
Keywords :
III-V semiconductors; X-ray photoelectron spectra; atomic force microscopy; crystal microstructure; electro-optical effects; gallium compounds; ohmic contacts; optical films; p-n junctions; semiconductor growth; semiconductor thin films; transparency; tunnelling; wide band gap semiconductors; zinc compounds; -ray photoelectron spectrometry; ZnO-GaN; atomic force microscopy; conducting ZnO films; contact material; electron transmission microscopy; electronic properties; microstructure; ohmic contacts; p-GaN; transparent Zno films; tunnelling p-GaN/ n+-ZnO junction; zinc oxide; Atomic force microscopy; Conducting materials; Conductive films; Fabrication; Microstructure; Ohmic contacts; Photoelectron microscopy; Spectroscopy; Transmission electron microscopy; Zinc oxide;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237184
