DocumentCode
2153187
Title
HBT Technology for High Power X Band and Broadband Amplification
Author
Alleaume, P.F. ; Auxemery, Ph. ; Viaud, J.P. ; Blanck, H. ; Lajugie, M.
Author_Institution
Thomson-CSF Microelectronique, 29 av CARNOT 91349 MASSY Cedex France. Pierre-Franck.Alleaume@TCM.THOMSON-CSF.COM
fYear
2000
fDate
Oct. 2000
Firstpage
1
Lastpage
4
Abstract
For many applications like active phased array antennas for airborne radar, high power levels are required. To provide high performance and high manufacturing yield at a reduced coast, a MMIC solution is naturally very attractive. This can be achieved by choosing an efficient technology for active components. In this paper, a solution based on the HBT technology is presented. The 10W class, X band power amplifiers, and 1W, 4.5GHz-18GHz amplifiers were designed using the HBT technology HB20P from UMS. Based on the results obtained, this paper will discuss the capability and the technology improvements needed to reach the power and frequency bandwidth specifications with margin.
Keywords
Airborne radar; Antenna arrays; Bandwidth; Frequency; Heterojunction bipolar transistors; MMICs; Manufacturing; Phased arrays; Power amplifiers; Radar antennas;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. 30th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.2000.338681
Filename
4139694
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