The optical properties of very thin-layer CdTe/ZnSe

Author

Van Dao, Lap ; Makino, Hisao ; Takai, Toshiaki ; Lowe, Martin ; Hannaford, Peter ; Yao, Takafumi

Author_Institution

Centre for Atom Opt. & Ultrafast Spectrosc., Swinburne Univ. of Technol., Melbourne, Vic., Australia

fYear

2002

fDate

11-13 Dec. 2002

Firstpage

145

Lastpage

148

Abstract

The optical properties of the very thin layer semiconductor structure CdTe/ZnSe are investigated using temperature dependent photoluminescence and spectrally resolved three-pulse two-colour femtosecond photon echo measurements. The temperature dependence of the photoluminescence, the wavelength dependence of the dephasing of excited carriers, and the homogeneous broadening of the energy levels shown the luminescence of quantum dots in this samples.

Keywords

II-VI semiconductors; cadmium compounds; high-speed optical techniques; optical films; photon echo; semiconductor quantum dots; wide band gap semiconductors; zinc compounds; CdTe-ZnSe; dephasing; energy levels; excited carriers; homogeneous broadening; optical properties; photoluminescence; quantum dots; spectrally resolved photon echo measurements; thin layer semiconductor structure; three-pulse femtosecond photon echo measurements; two-colour femtosecond photon echo measurements; Atom optics; Biomedical optical imaging; Optical buffering; Optical pumping; Photoluminescence; Pulse modulation; Quantum dots; Temperature dependence; Ultrafast optics; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

ISSN

1097-2137

Print_ISBN

0-7803-7571-8

Type

conf

DOI

10.1109/COMMAD.2002.1237213

Filename

1237213