• DocumentCode
    2153459
  • Title

    High speed CMOS output stage for integrated DC-DC converters

  • Author

    Ng, Wai Tung ; Chang, Mingchao ; Yoo, Andrew ; Langer, Jiri ; Hedquist, T. ; Schweiss, Helmut

  • Author_Institution
    Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    1909
  • Lastpage
    1912
  • Abstract
    A Hybrid Waffle layout technique is introduced for the design of CMOS power transistors in integrated low voltage DC-DC converters. Comparing with conventional multi-finger layout scheme, the Hybrid Waffle layout scheme allows optimized trade-off between device on-resistance and metal interconnect resistance to minimize overall on-resistance. Interestingly, the reduced channel width per unit area also leads to lower gate capacitance and faster switching speed. This paper presents a prototype DC-DC converter IC that contains integrated gate drivers, protection circuits and CMOS output transistors. Implemented in a standard 0.25 ¿m CMOS, this IC can be switched at 12.5 MHz with output current rated at 800 mA with input voltage of up to 4.2 V. Peak power efficiency of 85% was observed at 100 mA. Die size is 1.1 × 1.5 mm2.
  • Keywords
    CMOS integrated circuits; DC-DC power convertors; driver circuits; electrical resistivity; integrated circuit layout; power transistors; CMOS output transistors; CMOS power transistors; channel width per unit area; current 100 mA; current 800 mA; frequency 12.5 MHz; gate capacitance; hybrid waffle layout technique; input voltage; integrated gate drivers; integrated low voltage DC-DC converters; metal interconnect resistance; on-resistance; output current; power efficiency; protection circuits; switching; voltage 4.2 V; Circuits; DC-DC power converters; Design engineering; Fingers; Low voltage; Power conversion; Power engineering and energy; Power transistors; Prototypes; Switching converters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734950
  • Filename
    4734950