DocumentCode
2153459
Title
High speed CMOS output stage for integrated DC-DC converters
Author
Ng, Wai Tung ; Chang, Mingchao ; Yoo, Andrew ; Langer, Jiri ; Hedquist, T. ; Schweiss, Helmut
Author_Institution
Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
1909
Lastpage
1912
Abstract
A Hybrid Waffle layout technique is introduced for the design of CMOS power transistors in integrated low voltage DC-DC converters. Comparing with conventional multi-finger layout scheme, the Hybrid Waffle layout scheme allows optimized trade-off between device on-resistance and metal interconnect resistance to minimize overall on-resistance. Interestingly, the reduced channel width per unit area also leads to lower gate capacitance and faster switching speed. This paper presents a prototype DC-DC converter IC that contains integrated gate drivers, protection circuits and CMOS output transistors. Implemented in a standard 0.25 ¿m CMOS, this IC can be switched at 12.5 MHz with output current rated at 800 mA with input voltage of up to 4.2 V. Peak power efficiency of 85% was observed at 100 mA. Die size is 1.1 à 1.5 mm2.
Keywords
CMOS integrated circuits; DC-DC power convertors; driver circuits; electrical resistivity; integrated circuit layout; power transistors; CMOS output transistors; CMOS power transistors; channel width per unit area; current 100 mA; current 800 mA; frequency 12.5 MHz; gate capacitance; hybrid waffle layout technique; input voltage; integrated gate drivers; integrated low voltage DC-DC converters; metal interconnect resistance; on-resistance; output current; power efficiency; protection circuits; switching; voltage 4.2 V; Circuits; DC-DC power converters; Design engineering; Fingers; Low voltage; Power conversion; Power engineering and energy; Power transistors; Prototypes; Switching converters;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734950
Filename
4734950
Link To Document