DocumentCode :
2153672
Title :
Phase characterisation of TiO2 thin films using micro-Raman spectroscopy and glancing angle X-ray diffraction
Author :
Hugman, I. ; Richards, B.S. ; Crosky, A.
Author_Institution :
Sch. of Mater. Eng., New South Wales Univ., Sydney, NSW, Australia
fYear :
2002
fDate :
11-13 Dec. 2002
Firstpage :
181
Lastpage :
184
Abstract :
It is possible to tune the refractive index (n) of a TiO2 film to the optimum value for an encapsulated silicon solar cell by annealing the coating after deposition. Annealing causes a change in the volume fraction of rutile and this was examined as a function of annealing temperature for thin (∼70 nm) TiO2 films on a silicon substrate using micro-Raman spectroscopy and glancing angle X-ray diffraction. Both techniques were able to monitor the progression of the phase change in the films. Micro-Raman spectroscopy provided a rapid means to monitor the phase change and could detect phase fractions below approximately 5%. Glancing angle X-ray diffraction provided quantitative results but the technique was considerably more time consuming. The results indicated that the refractive index varied linearly with the rutile phase fraction.
Keywords :
Raman spectra; X-ray diffraction; annealing; coatings; refractive index; solar cells; thin films; titanium compounds; Si; TiO2; TiO2 thin film; TiO2 thin films; annealing; coating; encapsulated silicon solar cell; glancing angle X-ray diffraction; microRaman spectroscopy; phase change; phase characterisation; phase fractions; refractive index; rutile; silicon substrate; volume fraction; Annealing; Coatings; Monitoring; Optical films; Photovoltaic cells; Refractive index; Semiconductor films; Silicon; Spectroscopy; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
ISSN :
1097-2137
Print_ISBN :
0-7803-7571-8
Type :
conf
DOI :
10.1109/COMMAD.2002.1237222
Filename :
1237222
Link To Document :
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