Title :
A low-voltage voltage doubler without body effect
Author :
Li, Ming ; Yang, Li-wu ; Kang, Jinfeng ; Wang, Yangyuan
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
A voltage doubler, which avoids body effect and then improves rise time and efficiency even with 1 V power supply, is presented. This art is designed for word line boosting, using 0.18 um EEPROM technology. Not only the voltage doubler can work with capacitive load normally, but also it can supply load current and achieve higher efficiency. The whole circuit can be implemented on chip and is suitable for low voltage application. In addition, theoretical analysis and simulation results have been given.
Keywords :
EPROM; low-power electronics; voltage multipliers; EEPROM technology; body effect; rise time; size 0.18 mum; voltage 1 V; voltage doubler; word line boosting; Boosting; Charge pumps; Circuit simulation; EPROM; Low voltage; MOSFETs; Microelectronics; Power supplies; Switches; Threshold voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734962
