An AlGaSb avalanche photodiode exhibiting low excess noise factor

Author

Mikawa, T. ; Miura, S. ; Kuwatsuka, H. ; Yasuoka, N. ; Tanahashi, T. ; Wada, O.

Author_Institution

Fujitsu Lab. Ltd., Atsugi, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

487

Lastpage

490

Abstract

An AlGaSb avalanche photodiode (APD), having a large ionization rate ratio due to resonant impact ionization, has been fabricated and tested. The excess noise factor and the ionization rates for holes and electrons have been measured. A low excess noise factor of 3.8, which is 1.2 dB lower than that of the conventional GaInAs APD, has been obtained. From this excess noise factor, the effective value of the hole-to-electron ionization rate ratio k/sub eff/ has been determined to be as high as 5, which is in good agreement with the hole-to-electron ionization rate ratio given by multiplication data. This (k/sub eff/) value would be the highest ever reported for long-wavelength III-V APDs. Such a large ionization rate ratio is expected due to resonant impact ionization.<>

Keywords

III-V semiconductors; aluminium compounds; avalanche photodiodes; electron device noise; gallium compounds; impact ionisation; APD; AlGaSb avalanche photodiode; hole-to-electron ionization rate ratio; large ionization rate ratio; long-wavelength; low excess noise factor; multiplication data; resonant impact ionization; semiconductors; Avalanche photodiodes; Dark current; Diodes; Etching; Gold; Ionization; Resonance; Signal to noise ratio; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32861

Filename

32861