DocumentCode
2154221
Title
Strong red light emission from silicon nanocrystals embedded in SiO2 matrix
Author
Chen, W.D. ; Wang, Y.Q. ; Chen, C.Y. ; Diao, H.W. ; Liao, X.B. ; Kong, G.L. ; Hsu, C.C.
Author_Institution
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
fYear
2002
fDate
11-13 Dec. 2002
Firstpage
267
Lastpage
270
Abstract
In this study, silicon nanocrystals embedded in SiO2 matrix were formed by conventional plasma enhanced chemical vapor deposition (PECVD) followed by high temperature annealing. The formation of silicon nanocrystals (nc-Si), their optical and micro-structural properties were studied using various experimental techniques, including Fourier transform infrared spectroscopy, micro-Raman spectra, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Very strong red light emission from silicon nanocrystals at room temperature (RT) was observed. It was found that there is a strong correlation between the PL intensity and the substrate temperature, the oxygen content and the annealing temperature. When the substrate temperature decreases from 250 °C to RT, the PL intensity increases by two orders of magnitude.
Keywords
Fourier transform spectra; Raman spectra; X-ray photoelectron spectra; annealing; crystal microstructure; elemental semiconductors; high-temperature techniques; infrared spectra; nanostructured materials; optical films; photoluminescence; plasma CVD; silicon; silicon compounds; transmission electron microscopy; 250 to 25 degC; Fourier transform infrared spectroscopy; PECVD; PL intensity; Si; SiO2 matrix; SiO2-Si; annealing temperature; conventional plasma enhanced chemical vapor deposition; high resolution transmission electron microscopy; high temperature annealing; micro-Raman spectra; microstructural properties; optical properties; oxygen content; room temperature; silicon nanocrystals; strong red light emission; substrate temperature; x-ray photoelectron spectroscopy; Annealing; Chemical vapor deposition; Electron optics; Nanocrystals; Optical microscopy; Plasma chemistry; Plasma properties; Plasma temperature; Plasma x-ray sources; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
ISSN
1097-2137
Print_ISBN
0-7803-7571-8
Type
conf
DOI
10.1109/COMMAD.2002.1237243
Filename
1237243
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