DocumentCode
2154403
Title
Generic fractal behaviour of ballistic devices
Author
Taylor, R.P. ; Newbury, R. ; Micolich, A.P. ; Davies, A.G. ; Fromhold, T.M. ; Linke, H. ; Macks, L.D. ; Tribe, W.R. ; Linfield, E.H. ; Ritchie, D.A. ; Martin, T.P.
Author_Institution
Dept. of Phys., Oregon Univ., Eugene, OR, USA
fYear
2002
fDate
11-13 Dec. 2002
Firstpage
293
Lastpage
298
Abstract
Semiconductor billiard systems are used to investigate fractal conductance fluctuations and their dependence on two crucial parameters of ballistic transport - the shape and energy profile of the device walls.
Keywords
ballistic transport; fractals; semiconductor devices; AlGaAs-GaAs; ballistic devices; ballistic transport; device wall shape; energy profile; fractal conductance fluctuations; generic fractal behaviour; nanotechnology; semiconductor billiard systems; Astronomy; Electrons; Fluctuations; Fractals; Gallium arsenide; Laboratories; Physics; Quantum mechanics; Shape; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
ISSN
1097-2137
Print_ISBN
0-7803-7571-8
Type
conf
DOI
10.1109/COMMAD.2002.1237249
Filename
1237249
Link To Document